Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection
نویسندگان
چکیده
In this paper, a single-chip front-end (SCFE) operating in Ku-band (12–17 GHz) is presented. It designed exploiting GaN on SiC technology featured by 150 nm gate length provided UMS foundry. This MMIC integrates high power and low noise amplification functions enabled single-pole double-throw (SPDT) switch, occupying total area of 20 mm2. The transmitting chain (Tx) presents 39 dBm output power, added efficiency (PAE) higher than 30% 22 dB gain. receive path (Rx) offers figure (NF) lower 2.8 with 25 linear Rx port leakage limited chip to be below 15 even at compression levels. Finally, complete characterization the SCFE Tx modes presented, also showing measurement recovery time presence large-signal interferences.
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ژورنال
عنوان ژورنال: Electronics
سال: 2022
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics11192998